Len Feldman has been named a fellow of the IEEE (Institute of Electrical and Electronics Engineers), effective January 1, 2016. Each year, following a rigorous evaluation procedure, the IEEE Fellow Committee recommends a select group of recipients for ele
Less than 0.1% of voting members are selected annually for this member grade elevation.
The citation for Len reads: for contributions to semiconductor-dielectric interfaces for MOS technologies.
Len is Vice President for Physical Science and Engineering Partnerships, Director of the Institute for Advanced Materials, Devices and Nanotechnology and Distinguished Professor Physics and Materials Science & Engineering. With this new distinction he is now a Fellow of the IEEE, the Materials Research Society, The American Association for the Advancement of Science, the American Vacuum Society and the American Physical Society.